| PART |
Description |
Maker |
| 2673000701 |
Lower Frequencies < 50 MHz
|
Fair-Rite Products Corp.
|
| 2673000101 |
Lower Frequencies < 50 MHz
|
Fair-Rite Products Corp.
|
| 2661375102 |
Higher Frequencies 250-1000 MHz
|
Fair-Rite Products Corp.
|
| BAR15 BAR16 BAR14 |
RF switch RF attenuator for frequencies above 10 MHz Low distortion factor
|
TY Semiconductor Co., Ltd
|
| AP6970GN2-HF AP6970GN2-HF-14 |
Bottom Exposed DFN, Lower Profile
Lower Gate Charge
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| BLF6G22-45 |
Power LDMOS transistor
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
| CLY5 Q62702-L90 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) 砷化镓场效应管（功率放大器，对于00兆赫2.5千兆赫频率的移动电话
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| CLY15 Q62702-L99 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) 砷化镓场效应管（功率放大器，对于00兆赫2.5千兆赫频率的移动电话
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BLF7G27L-90P BLF7G27LS-90P |
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| 3308-1350 |
KR Electronics part number 3308-1350 is a 1350 MHz lowpass filter module Other cutoff frequencies are available
|
KR Electronics, Inc.
|
